Rambus' memory DDR3
Wednesday, July 22, 2009
Rambus' memory controller interface solution for industry-standard DDR3 DRAMs features a fully integrated macro cell which provides the physical layer (PHY) interface between the controller logic and DDR3 or DDR2 DRAM devices for data rates of up to 1600 MHz. Optimized for low power and reduced silicon area, the Rambus DDR3 memory controller interface cell is designed to accommodate a broad range of applications including PC main memory, consumer electronics, servers, and workstations. To serve these applications, Rambus has architected and developed a DDR3 memory controller interface macro-cell that engineers can seamlessly integrate into their customer owned tooling (COT) or application-specific integrated circuit (ASIC) timing adjustment circuits for precise on-chip data alignment with the clock
Calibrated output drivers.On-die software environment for bring-up, characterization and validation of the DDR3 interface in the end-user application.
Other key interface features include:-
800 to 1600 MHz data rates
Support for DDR3 and DDR2 signaling modes
On-chip phase-locked loop (PLL)
On-chip delay-locked loop (DLL)
Levelization support for fly-by command and address architecture
Variable data bit-widths (8-, 16-, 32-, and 64-bit) with optional ECC support
Rambus interface solutions provide a comprehensive architecture and system design, as well as design models and integration tools. Included in the solution are reference GDSII database, timing models, layout verification netlists, gate-level models, place-and-route outline, and placement guidelines. Package design and system board layout services are also available.
Posted bySaini at 3:10 PM
Labels: Memories
